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RSS FeedsOxygen-Doped Zinc Nitride as a High-Mobility Nitride-Based Semiconductor (Journal of Physical Chemistry C)

 
 

5 march 2015 03:24:22

 
Oxygen-Doped Zinc Nitride as a High-Mobility Nitride-Based Semiconductor (Journal of Physical Chemistry C)
 


The Journal of Physical Chemistry CDOI: 10.1021/jp5122992


 
152 viewsCategory: Chemistry, Physics
 
Solid-State Dynamics in the closo-Carboranes: A 11B MAS NMR and Molecular Dynamics Study (Journal of Physical Chemistry B)
Sensors, Vol. 15, Pages 5376-5389: A Portable Automatic Endpoint Detection System for Amplicons of Loop Mediated Isothermal Amplification on Microfluidic Compact Disk Platform (Sensors)
 
 
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