MyJournals Home  

RSS FeedsSensors, Vol. 19, Pages 865: Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources (Sensors)

 
 

19 february 2019 17:00:23

 
Sensors, Vol. 19, Pages 865: Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources (Sensors)
 


In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si 3 N 4 bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement–related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.


 
45 viewsCategory: Chemistry, Physics
 
Sensors, Vol. 19, Pages 866: Exploring RGBDepth Fusion for Real-Time Object Detection (Sensors)
[ASAP] Hydration and Counterion Binding of an Aminomethylated Resorcin[4]arene (Journal of Physical Chemistry B)
 
 
blog comments powered by Disqus


MyJournals.org
The latest issues of all your favorite science journals on one page

Username:
Password:

Register | Retrieve

Search:

Physics


Copyright © 2008 - 2024 Indigonet Services B.V.. Contact: Tim Hulsen. Read here our privacy notice.
Other websites of Indigonet Services B.V.: Nieuws Vacatures News Tweets Nachrichten