Physics
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22 february 2019 00:04:45 |
| [ASAP] Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars (Journal of Physical Chemistry C) |
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Tweet The Journal of Physical Chemistry CDOI: 10.1021/acs.jpcc.8b11830
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| 35 viewsCategory: Chemistry, Physics |
 [ASAP] Unveiling the Critical Role of Surface Oxidation of Electroresponsive Behaviors in Two-Dimensional Ti3C2Tx MXenes (Journal of Physical Chemistry C)[ASAP] Desorption of Fullerene Dimers upon Heating Non-IPR Fullerene Films on HOPG (Journal of Physical Chemistry C) 
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