MyJournals Home  

RSS Feeds[ASAP] High Aspect Ratio ß-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching (ACS Nano)

 
 

24 june 2019 19:02:17

 
[ASAP] High Aspect Ratio ß-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching (ACS Nano)
 


ACS NanoDOI: 10.1021/acsnano.9b01709


 
83 viewsCategory: Physics
 
[ASAP] Tunable Synthesis of Hollow Metal-Nitrogen-Carbon Capsules for Efficient Oxygen Reduction Catalysis in Proton Exchange Membrane Fuel Cells (ACS Nano)
[ASAP] Application of Displacement-Current-Governed Triboelectric Nanogenerator in an Electrostatic Discharge Protection System for the Next-Generation Green Tire (ACS Nano)
 
 
blog comments powered by Disqus


MyJournals.org
The latest issues of all your favorite science journals on one page

Username:
Password:

Register | Retrieve

Search:

Physics


Copyright © 2008 - 2024 Indigonet Services B.V.. Contact: Tim Hulsen. Read here our privacy notice.
Other websites of Indigonet Services B.V.: Nieuws Vacatures News Tweets Nachrichten