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[ASAP] Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier
(ACS Nano)
26 june 2019 21:03:03
[ASAP] Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier
(ACS Nano)
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ACS NanoDOI: 10.1021/acsnano.9b03993
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Physics
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