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RSS Feeds[ASAP] Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier (ACS Nano)

 
 

26 june 2019 21:03:03

 
[ASAP] Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier (ACS Nano)
 


ACS NanoDOI: 10.1021/acsnano.9b03993


 
72 viewsCategory: Physics
 
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