Chemistry
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15 october 2019 04:04:30 |
| [ASAP] Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory (Chemistry of Materials) |
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Tweet Chemistry of MaterialsDOI: 10.1021/acs.chemmater.9b01937
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| 206 viewsCategory: Chemistry |
 [ASAP] Discovery and Mechanistic Study of a Totally Organic C(aryl)-C(alkyl)Oxygen Insertion Reaction (Journal of Organic Chemistry)[ASAP] Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1-x Films for Endurable Phase Change Memory (Chemistry of Materials) 
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