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RSS FeedsSensors, Vol. 20, Pages 2053: A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line (Sensors)

 
 

6 april 2020 14:00:54

 
Sensors, Vol. 20, Pages 2053: A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line (Sensors)
 


This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CMOS process with general VTH transistors and the active die area was 0.432 mm2. The temperature resolution was 0.49 °C and the temperature error was from −1.6 to +0.6 °C over the range of 0 to 100 °C after two-point calibration. The supply voltage sensitivity was 0.085 °C/mV. The conversion rate was 25kHz and the energy efficiency was 7.2 nJ/sample.


 
28 viewsCategory: Chemistry, Physics
 
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