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RSS FeedsEnergies, Vol. 14, Pages 6720: High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules (Energies)

 
 

15 october 2021 16:48:18

 
Energies, Vol. 14, Pages 6720: High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules (Energies)
 


Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond`s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise the small changes in the current density distribution to find the onset of the wire bond degradation processes, including wire bond lift-off, wire bond cracking, and wire bond fracture. We propose a novel condition monitoring technique where a non-galvanic high-bandwidth sensing and a reliability model monitor the health of the power switches. We designed a dedicated calibration set-up to examine the sensor array and calibrated to demonstrate the adequate sensitivity to a minimum 5% current anomaly detection in a single wire bond of the switching devices operating with 50 kHz switching frequency. We use a hardware-in-the-loop (HIL) experimental set-up to replicate wire bond-related failures in a 1200V/55A SiC MOSFET power module of a DC/DC Boost converter. Signal conditioning circuits are further designed to amplify and buffer the sensor readings. Experimental results showed the proposed technique is able to detect a wide range of package-related failures.


 
148 viewsCategory: Biophysics, Biotechnology, Physics
 
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Energies, Vol. 14, Pages 6723: In-Company Smart Charging: Development of a Simulation Model to Facilitate a Smart EV Charging System (Energies)
 
 
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