Physics
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26 march 2020 23:03:22 |
| [ASAP] Aqueous Solution-Processed Boron-Doped Gallium Oxide Dielectrics for High-Performance Thin-Film Transistors (Journal of Physical Chemistry C) |
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Tweet The Journal of Physical Chemistry CDOI: 10.1021/acs.jpcc.0c01281 |
| 199 viewsCategory: Chemistry, Physics |
 [ASAP] Mechanism of Proton Conduction in Doped Barium Cerates: A First-Principles Study (Journal of Physical Chemistry C)[ASAP] Formation of SiP2 Nanocrystals Embedded in SiO2 from Phosphorus-Rich SiO1.5 Thin Films (Journal of Physical Chemistry C) 
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